ESI - HI2200 & HI2300 - High Temperature Pressure Sensor
  • ESI - HI2200 & HI2300 - High Temperature Pressure Sensor
  • ESI - HI2200 & HI2300 - High Temperature Pressure Sensor

ESI - HI2200 & HI2300 - High Temperature Pressure Sensor

The ESI Technology HI2200 & HI2300 high temperature pressure sensor series is designed to operate in applications with high demands on media and ambient temperature effects.

Silicon-on-sapphire sensor technology

Media temperature up to 200°C

Ambient temperature up to 200°C

Good chemical compatibility for a range of applications

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The ESI Technology HI2200 & HI2300 high temperature pressure sensor series is designed to operate in applications with high demands on media and ambient temperature effects.

The unique Silicon-on-Sapphire (SOS) sensor technology provides outstanding insulating properties which means this pressure sensor can still give great performance and excellent stability over such a wide temperature range of 200°C. The sensor starts from 0 - 1 bar up to 0 - 1500 bar with a total of nine standard pressure ranges, two options of output (10-20 mV/V or 10 mV/V) and also two different electrical connections (1 meter PTFE insulated flying lead or MIL-C-26482 6 pin bayonet).

Application examples

  • Furnaces
  • Process
  • Tanks
  • Thermal chambers

Ambient temperature -40..200°C
Approvals CE, IEC
Electrical connection 1m PFTE insulated flying lead
EMC EN61000-6-4, EN61000-6-2
Linearity ≤±0.1% BSFL
Material of wetted parts Titanium alloy
Media temperature -50..200°C
Output 10-20mV/V
Overpressure protection 2 bar
Pressure range max 1 bar
Pressure range min 0 bar
Pressure reference Gauge
Process connection G1/4
Sensor technology Silicon-on-Sapphire
Storage temperature 5..40°C
Supply voltage 10 V DC (5-15 V)